ZnO-Nanowire-Based Extended-Gate Field-Effect-Transistor pH Sensors Prepared on Glass Substrate
The sensing membrane of a extended-gate field-effect-transistor (EGFET) pH sensor, consisting of a zinc oxide (ZnO) thin film and a ZnO nanowire array, was fabricated using the Vapor–liquid–solid method. The EGFET pH sensor with ZnO nanowire array exhibited significantly
improved sensing performance owing to a large sensing surface-to-volume ratio. The measured current and voltage sensitivities of the pH sensor were 48.6 μA/pH and 36.9 mV/pH, respectively, at pH values ranging from 4 to 10.
Keywords: EGFET; NANOWIRE; PH; ZNO
Document Type: Research Article
Publication date: 01 November 2012
- Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Ingenta Connect is not responsible for the content or availability of external websites
Receive new issue alert- Access Key
- Free content
- Partial Free content
- New content
- Open access content
- Partial Open access content
- Subscribed content
- Partial Subscribed content
- Free trial content