Fabrication of Nanoscale Electrical Circuits on Diamond-Like Carbon Film by Scanning a Ga⁺ Focused Ion Beam

In this study, we attempted to control the electrical conductivity of diamond-like carbon (DLC) films by Ga + focused ion beam (FIB) implantation. We performed Ga + ion implantation in DLC films by scanning a FIB. The Raman scattering spectra of Ga + ion implanted DLC films and non-implanted DLC films showed typical DLC characteristics by Raman spectroscopic analysis. We examined the relationship between electrical resistivity and Ga + dose by the two probe method. The electrical resistivity of DLC films decreased with an increase in the Ga + ion dose. Also, the current passing through a nanosized area of the DLC films implanted with Ga + ions increased with increasing voltage. These results showed that FIB implantation was capable of controlling the electrical conductivity of DLC, and that nanoscale electrical circuits can be written on DLC films by FIB implantation.