Microwave Conductivity of Very Thin Graphene and Metal Films
The surface resistance of Ag, Au and A1 thin conducting films deposited on low loss dielectric substrates at microwave frequencies using TE011 mode single post-dielectric resonator (10–13.22 GHz) was measured to calculate their conductivity in relation to layers thickness. This method enabling measurements near metal-insulator percolation transition was also applied for epitaxial graphene deposited on semi-insulating SiC. Moreover, effective microwave conductivity has been determined for intentionally made aluminum island structure where the DC conductivity is equal to zero. Special attention was paid to films thickness measurements which is critical for accuracy of sheet resistance calculation. Conductivity of thin metal layers and very thin graphene was compared.
Keywords: CONDUCTIVITY; GRAPHENE; SILICON CARBIDE; THIN METAL FILMS
Document Type: Research Article
Publication date: 01 April 2011
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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