CFD Simulation of Chemical Vapor Deposition of Silicon Carbide in CH3SiCl3-H2 System
The CVD apparatus for the uniform coating of silicon carbide was suggested and realized into a 3-dimensional computer-aided design (CAD) model. An experimental condition is simulated with a computational fluid dynamic program to obtain temperature and flow distribution in the CVD chamber.
The simulated temperature showed the very uniform distribution especially in the hot zone region and that is thought to be the result of the design of the CVD apparatus. The temperature measured with a thermocouple showed the good matching with the simulated one, which reflected the assumption
and the boundary conditions during the simulation were plausible.
Keywords: Chemical vapor deposition; computational fluid dynamic; methyltrichlorosilane; modeling; silicon carbide; simulation; thermodynamic calculation
Document Type: Research Article
Publication date: 01 February 2014
- Current Nanoscience publishes authoritative reviews and original research reports, written by experts in the field on all the most recent advances in nanoscience and nanotechnology. All aspects of the field are represented including nano- structures, synthesis, properties, assembly and devices. Applications of nanoscience in biotechnology, medicine, pharmaceuticals, physics, material science and electronics are also covered. The journal is essential to all involved in nanoscience and its applied areas.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Ingenta Connect is not responsible for the content or availability of external websites
Receive new issue alert- Access Key
- Free content
- Partial Free content
- New content
- Open access content
- Partial Open access content
- Subscribed content
- Partial Subscribed content
- Free trial content