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Surface Morphology Effect on the Optical Properties of III-Nitrides Nanostructures for Photo-Sensing Applications

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The structure and photosensitive properties of III-nitrides nanostructures (GaN, In x Ga1–x N and A1 x Ga1–x N) grown by MBE on silicon (Si) substrates are investigated. The measurements of the reflectance, refractive index and AFM analysis are carried out. AFM images of n-type GaN nanostructure grown on Si exhibits different surface textures. A smooth surface texture is observed in p-type GaN nanostructure grown on Si substrate. The AFM images of AlGaN/Si nanostructure involve of several columnar arranged grains with identical particle size scattering. The roughness (RMS) values of the grown nitrides nanostructure of p-type and n-type GaN, In x Ga1–x N and n-type Al x Ga1–x N of 4.37, 14.8, 5.42 and 9.46 nm respectively are obtained. The reflectivity spectrum of the III-nitride nanostructure shows different peaks scattering happens which confirm the presence of separated valence groups and prompt to three in number absorption includes the A, B, and C excitons. The obtained reflection coefficient in the photon energy ranged (2–10) eV indicates of three particular peaks at photon energies of 3.3, 3.4, and 3.7 eV respectively.
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Keywords: EXCITONS; III-NITRIDES; NANOSTRUCTURES; REFLECTION COEFFICIENT; SURFACE ROUGHNESS

Document Type: Research Article

Publication date: January 1, 2018

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