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Electronic Properties of GaSb Based Heterostructure for 3 μm Emission

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III–V quantum well structures are now the subject of increasing number of studies due to their applications in optoelectronic devices. We have calculated the electronic band parameters for Al x Ga1−x As y Sb1−y /GaSb. Thus and using the model solid theory, strain effects on heavy holes (hh), light holes (lh) and split off (so) are investigated as function of Aluminum and arsenic compositions in the hole range 0 ≤ x, y ≤ 1. Taking into account these results and based on a one dimensional Shrodinguer equation, we report a calculation of the quantum confinement of electron and heavy-hole levels for Ga1−x In x As y Sb1−y /Al x Ga1−x As y Sb1−y . Our results provide useful information for the design of heterostructure emitting near 3 μm.
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Keywords: ALGAASSB; III-V COMPOUND; OPTOELECTRONIC APPLICATION

Document Type: Research Article

Publication date: December 1, 2011

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