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Impacts of Excimer Laser Annealing on Shallow B-Doped Back-Surface for Back-Illuminated CMOS Imagers Applications

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Backside-illuminated CMOS image sensors need very restricted thermal budgets for silicon surface passivation. We investigated pulsed laser annealing (PLA) after shallow boron implantation to evaluate its effectiveness in terms of dopant activation, defect-curing, and redistribution. Several characterization techniques were performed, including room-temperature photoluminescence (RT-PL) mapping, four-point probe sheet resistance measurements (Rs ), and secondary ion mass spectroscopy (SIMS) analysis. Melt PLA allows very effective recrystallisation and dopant activation by only one single shot, but it also induces large box-like dopant redistribution. In contrast, submelt PLA does not exhibit a full defect-curing and dopant activation, but significant improvements can be obtained by adopting a multi-pulsed approach. This preserves dopant profiles practically unmodified.
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Keywords: BACK-SURFACE PASSIVATION; DOPANT ACTIVATION; PHOTOLUMINESCENCE; PULSED LASER ANNEALING

Document Type: Research Article

Publication date: December 1, 2011

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