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Threshold Voltage Tuning in Multilayer MoS2 Transistors via Fluorine-Based Plasma Treatment

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Inherent n-type transport behaviors in molybdenum disulfide (MoS2) have been a challenge for power-efficient nanoelectronic devices. Here, we report on threshold voltage tuning of multilayer MoS2 transistors induced by counter-doping effects of fluorine-based plasma treatment. The incorporated fluorine ions (F) with relatively strong electronegativity effectively attract the excess carriers, electrons in MoS2 layers. In order to directly observe and compare the effects of counter-doping, we fabricate bottom-gated multilayer MoS2 transistors using a conventional mechanical exfoliation method. The MoS2 transistors treated with CF4 plasma exhibit positive V TH of 6.5±3.8 V and inverse proportionality to the MoS2 channel thickness. In comparison to molecular chemisorption doping, the plasma doping method, which is facile, controllable, and CMOS-process compatible, can be more universal approach for wafer-scale TMDs through further process optimization.
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Keywords: MOS2; PLASMA TREATMENT; THRESHOLD VOLTAGE SHIFT

Document Type: Research Article

Publication date: October 1, 2018

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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