Peculiar Photoluminescence Properties of Strained In x Ga1–x N/GaN Multiple-Quantum Wells: Experiment and Theory
Combined experimental and computational efforts are focused to investigate the power-dependent micro-photoluminescence (μPL) properties of In x Ga1–x N/GaN multiple-quantum wells (MQWs). High-quality hexagonal In x Ga1–x N/GaN MQWs were successfully grown using plasma-assisted molecular-beam epitaxy (PA-MBE), with multiplicity of 1, 3 and 5. Characterizations methods based on scanning tunneling electron microscopy (STEM) and PL indicated that each period is composed of 10 nm GaN barrier and 2.5 nm In x Ga1–x N well with x ≤ 0.12. In power (ranging from 0.008 mW to 8 mW) dependent micro-photoluminescence (μPL) measure at room temperature, blue shifts of about 11.11 nm, 11.94 nm and 14.94 nm were observed corresponding to the single-quantum well (1-QW), 3-MQW, and 5-MQW, respectively. Experimental observations were further verified by simulations based on 3D tight-binding method using simple sp 3-basis set. The theoretical results show that larger blue-shift in 5-MQW sample to be attributed to higher bi-axial strain and interface-specific effects with a further increase of the hole well's (h-Well) depth, Vh 0, and increase in number of localized hole states within the h-Well. Furthermore, this study reveals role of bi-axial strain, well composition, and interface specific effects on the peculiar behaviors of valence-band offset (VBO) in In x Ga1–x N/GaN MQWs.
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Document Type: Research Article
Publication date: July 1, 2018
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