Characterization of TiO x Thin Films Fabricated by Plasma-Enhanced Chemical Vapor Deposition for Hard-Mask Applications in Semiconductor Devices
Titanium oxide (TiO x ) thin films were fabricated by plasma-enhanced chemical vapor deposition using titanium tetraisopropoxide (TTIP) and cyclohexane (CHex) precursors. The films fabricated using a single precursor of TTIP at deposition temperatures of 400 °C and 500 °C showed polycrystalline structure with anatase and/or rutile phases. The TiO x films fabricated using mixed precursors of TTIP and CHex at temperatures in the range of 300–500 °C, and those fabricated using the single TTIP precursor at 300 °C showed amorphous structures. For the films fabricated using the single TTIP precursor, the O/Ti ratios were in the range of 1.72–1.75. Higher content of carbon (83–91 at%) and O/Ti ratios in the range of 1.31–1.83 were observed for the films fabricated using mixed precursors. Ti2p, O1s, and C1s peaks were analyzed using X-ray photoelectron spectroscopy. Fourier-transform infrared spectroscopy measurements showed that the Ti–O stretching vibration peak was primarily observed in the film fabricated using the single TTIP precursor; it had a lower intensity for the films fabricated using mixed precursors. Dry-etching showed that the TiO x film fabricated using the TTIP single precursor, deposited at 400 °C, had a high etch selectivity of 9.9 over SiO2, which demonstrates its potential for application as a hard-mask material.
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Document Type: Research Article
Publication date: July 1, 2018
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