Optical and Electrical Characteristics of Vertical Light-Emitting Diodes Formed Using Various Current Blocking Methods
This study compared the optical and electrical characteristics of GaN-based vertical light-emitting diodes (VLEDs) formed using various current blocking (CB) methods. The buried-type SiO2 CB method was found to be most effective in increasing the light output power of the
VLEDs. In addition, the use of SiO2 CB layers (CBLs) produced less than 3% of the initial optical power drop and stable electrical properties after a 720 h reliability test. The O2 plasma treatment, however, caused severe degradation of the VLED reliability due mainly
to plasma-induced damage to the p-GaN layer during CBL formation.
Keywords: CURRENT BLOCKING LAYER; GAN; RELIABILITY; VERTICAL LIGHT-EMITTING DIODES
Document Type: Research Article
Publication date: 01 February 2018
- Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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