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Morphology Transformation of Au Nanoparticles for Vertically Aligned Si Nanowire Arrays

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The controllable vertically aligned Si nanowire (SiNW) arrays were explored by morphology transformation of Au nanoparticles (AuNPs) from Au film during annealing at different annealing temperatures. The epitaxial growth of SiNW scan be achieved using SiCl4 as the Si precursor in chemical vapor deposition (CVD) via a vapor–liquid–solid (VLS) growth mechanism. The diameter and density of the SiNWs can be controlled by regulating the annealing temperatures, which are related with migration kinetics of Au atoms, during the formation of AuNPs. During the annealing process, uniform AuNPs are formed by Ostwald ripening and gold silicide is produced by diffusing Si atoms from Si(111) wafer into liquid-phase AuNPs at high annealing temperature, leading to uniform diameter and decreasing density of the SiNW.
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Keywords: ANNEALING; DENSITY; DIAMETER; EPITAXIAL GROWTH; SILICON NANOWIRE

Document Type: Research Article

Publication date: August 1, 2016

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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