Thermoelectric Properties of Bi2Te3 and Bi0.5Sb1.5Te3 Thin Films and Their Energy Generating Performance
We report on the influence of post-annealing on the crystalline structures, chemical position, and thermoelectric (TE) properties—including Seebeck coefficient, electric resistivity, power factor, and thermal conductivity—of both n-type Bi2Te3 (n-BT) and p-type Bi0.5Sb2Te3 (p-BST) thin films with a thickness of 300 nm, which are prepared by radio-frequency (RF) sputtering. For this study, the samples are annealed at temperatures of 20, 100, 200, and 300 °C under Ar atmosphere. From the measured TE properties, both n-BT and p-BST thin films annealed at 200 °C exhibit the highest TE performance. The samples reveal resistivities of 2.2 × 10–4 Ωcm and 7.7 × 10–3 Ωcm, Seebeck coefficients of –45 μV/K and 190 μV/K, and power factors of 9.6 × 10–4 W/K2m and 4.7 × 10–4 W/K2m for 200 °C annealed n-BT and p-BST thin films, respectively. In addition, we obtain that the average thermal conductivities of the annealed n-BT and p-BST thin films to be ∼0.2–0.6 W/(m·K) and ∼0.3–0.5 W/(m·K) at room temperature using the 3-ω method, respectively, indicating a slight increase with increasing annealing temperatures. Furthermore, the TE performance of a thin-film-based TE energy generator consisting of n-BT and p-BST thin film legs on Si substrate is demonstrated. The output voltage of the TE generator is determined to be ∼4.3 mV from a temperature difference of 50 K.
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Document Type: Research Article
Publication date: August 1, 2016
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