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Effect of Annealing Atmosphere on the Optical and Electrical Properties of Al-Doped ZnO Films and ZnO Nanorods Grown by Solution Process

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We demonstrated the synthesis of highly transparent conductive Al-doped zinc oxide (AZO) films through sequential nucleation and growth using a hydrothermal process. Vertically-aligned zinc oxide nanorods (ZnO NRs) were grown on the as-synthesized AZO films and the seed layer formed on glass/AZO by a low-temperature solution process. The ZnO NRs were randomly grown on the as-deposited AZO films. However, a high density of ZnO NRs grew vertically on the seeded AZO films. The influence of annealing atmosphere on the optical and electrical properties of as-deposited AZO films and after growing ZnO NRs on AZO films were performed by annealing in air, hydrogen, oxygen, nitrogen and argon ambient. The results indicated that the resistivity and mobility were lowest for argon-annealed samples, whereas the carrier density was highest. The normalized PL peak intensity of argon-annealed sample in visible region was highest due to increase in surface defects.
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Keywords: CONDUCTING OXIDE; SOLUTION PROCESS; TRANSPARENT; ZNO NANORODS

Document Type: Research Article

Publication date: August 1, 2016

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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