Direct Photo-Patternable Indium Zinc Oxide Thin Film Transistors Fabricated by Solution Process
Photo-patternable solution-processed indium zinc oxide (IZO) thin films are fabricated as the active layers in thin film transistors (TFTs), and their photo-patternability and transistor performance are investigated. The zinc and indium ions in the precursor solutions are chemically modified by a photosensitive chelating agent, methacrylic acid, which stabilizes the precursor solution and is polymerized during ultraviolet (UV) irradiation. Simultaneous bridging of the metal ions and polymerization of the chelating agents during UV irradiation could provide resistance to the developing solvent and enable negative photo-patternability. The directly photo-patterned IZO thin film using a photomask has a fine resolution with a width of 9.84 μm and a pitch of 5.3 μm. The photopatterned IZO TFT with an inverted-staggered structure exhibits a saturation mobility of 4 cm2/Vs and an on/off current ratio greater than 106.
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Document Type: Research Article
Publication date: April 1, 2016
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