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Direct Photo-Patternable Indium Zinc Oxide Thin Film Transistors Fabricated by Solution Process

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Photo-patternable solution-processed indium zinc oxide (IZO) thin films are fabricated as the active layers in thin film transistors (TFTs), and their photo-patternability and transistor performance are investigated. The zinc and indium ions in the precursor solutions are chemically modified by a photosensitive chelating agent, methacrylic acid, which stabilizes the precursor solution and is polymerized during ultraviolet (UV) irradiation. Simultaneous bridging of the metal ions and polymerization of the chelating agents during UV irradiation could provide resistance to the developing solvent and enable negative photo-patternability. The directly photo-patterned IZO thin film using a photomask has a fine resolution with a width of 9.84 μm and a pitch of 5.3 μm. The photopatterned IZO TFT with an inverted-staggered structure exhibits a saturation mobility of 4 cm2/Vs and an on/off current ratio greater than 106.
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Keywords: OXIDE SEMICONDUCTOR; SOL–GEL PROCESS; THIN-FILM TRANSISTOR

Document Type: Research Article

Publication date: April 1, 2016

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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