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Low Energy BCl3 Plasma Doping of Few-Layer Graphene

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In this paper, we use low energy BCl3 plasma for the doping of graphene, and investigate its effect on graphene sheet resistance. In particular, for few-layer graphene, we use a cyclic trap-doping technique to control the dopants between the graphene layers. By using the cyclic tra-doping with the low energy BCl3 plasma, we obtain significant reduction of sheet resistance (∼75%), while maintaining high optical transparency, flexibility, conductivity, and thermal stability. Raman data show that the graphene layers are p-type doped with no noticeable damage during the doping. By optimizing the doping condition, we obtain sheet resistance and optical transmittance of BCl3 doped trilayer graphene of 100 Ω/sq and 92% at 550 nm, respectively, which is very compatible with flexible display devices.
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Document Type: Research Article

Publication date: April 1, 2016

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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