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Influence of Annealing Temperature on Structural and Optical Properties of Undoped and Al-Doped Nano-ZnO Films Prepared by Sol–Gel Method

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Undoped and Al-doped nano-ZnO thin films are grown on sapphire substrates by a sol–gel method. Their structural, morphological, and optical properties have been investigated with respect to post-annealing temperatures of 500 °C and 700 °C. The undoped and Al-doped nano-ZnO films exhibit a dominant (002) XRD peak. By increasing the annealing temperature of ZnO from 500 °C to 700 °C, the homogeneously distributed granular nano-grains with 20–40 nm diameter are changed into faceted grains with 30–80 nm. The photoluminescence spectra show strong emission peak around 3.26 eV indicating a direct band gap recombination ascribed to free exiton emission. The Raman spectra exhibit a strong A 1 (LO) peak and its shift with increasing annealing temperature due to strain of undoped and Al-doped ZnO thin films concurs with the broadening of XRD peak.
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Document Type: Research Article

Publication date: April 1, 2016

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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