Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
Atomic Layer Deposition (ALD) process with self-limiting reaction on the substrate provides a very uniform and conformal thin film with high quality. In this regards, current industrial requirements of silicon oxide are as follow. Silicon oxide film is used as gate sealing and gate spacer oxide, gapfill oxide in memory and logic devices. It is also used for double and quadruple spacer in self-aligned patterning technology. Therefore, recent ALD of SiO2 requires very low temperature process, good step-coverage (thickness uniformity of SiO2 film in pattern) and excellent film density with high purity (low wet-etch rate) in device pattern. In order to meet these requirements, a new scheme called Space-Divided Plasma Atomic Layer Deposition (SDPALD) of silicon oxide was developed. A high-quality film deposition at low temperature was established in this process, high growth rate ensured accomplishing a high productivity. This study shows step coverage more than 95% at aspect ratio of 60:1, wet etch rate 0.48 Å/sec at 400 °C (100:1 HF). There is no sub-layer damage by plasma process. Also, pure SiO2 as well as doped SiO2 can be made by additiional gas. Doping concentration can be controlled by treatment time and process temperature. Currently, doped SiO2 can be developed for next generation device in memory technology. Therefore, we believe that SDPALD SiO2 system is the solution of next generation semiconductor.
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Document Type: Research Article
Publication date: April 1, 2016
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