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A Study on a Relationship Between Sputtering Condition and Electrochemical Property of Molybdenum Thin Films in Phosphoric Acid Solution

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The etching behavior of sputtered molybdenum thin film in a mixture of phosphoric acid and nitric acid was investigated. Open circuit potential transients and potentio-dynamic curves for various molybdenum thin films with different sputtering power were examined. As the power density increased, the residual stress of molybdenum thin film changed from –76.2 to –122.06 GPa and the density increased to 10.22 g/cm3. Despite these increase, the corrosion current of molybdenum thin film decreased. The molybdenum thin films deposited at high power density showed an accelerated corrosion rate in the solution compared to the film grown at low power density. The model based on the mechanical properties of the molybdenum thin film is presented. In addition, the difference in the corrosion rate of the molybdenum thin film with dependence on sputtering condition leads to the difference in galvanic relation between copper and molybdenum.
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Document Type: Research Article

Publication date: April 1, 2016

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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