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Microwave Annealing Effects on Spin-Coated Al Doped ZnO Transparent Conducting Oxides Thin Films

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The coexistence of electrical conductivity and optical transmittance is very important issue for the transparent conducting oxide applications. Low temperature annealing process has significant meaning for the compatibility with other electronic materials and devices. Microwave annealing process was proposed to enhance the electrical conductivity properties. 1∼2.5 mole% Al dopant was employed to ZnO thin films to improve the electrical and optical properties. Spin coating process was employed to fabricate the transparent thin films. Microwave annealing process was performed to enhance the electrical and optical properties. Microwave annealed Al doped ZnO thin films showed decreased sheet resistance and higher figure of merits.
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Document Type: Research Article

Publication date: April 1, 2016

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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