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Enhanced Charge Transfer Kinetics of Dye Sensitized Solar Cells Using a Nb2O5/ZnO Heterojunction Nanorod Photoanode

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This paper presents a novel strategy for the design of efficient DSSCs using a Nb2O5 energy barrier layer on ZnO nanorods. A monoclinic Nb2O5 energy barrier layer can be deposited readily on a ZnO nanorod by dip-coating method. The optimized Nb2O5/ZnO photoanode exhibits η, J SC, V OC, and FF values of 0.56%, 1.96 mA/cm2, 0.58 V, and 56%, respectively, which is 30% better than those obtained using the ZnO photoanode. This can be attributed to a decrease in the probability of charge recombination and an increase in the electron collection efficiency due to the presence of a Nb2O5 energy barrier layer between ZnO and the photosensitizer.
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Keywords: ENERGY BARRIER LAYER; NB2O5; PHOTOANODE; ZNO

Document Type: Research Article

Publication date: April 1, 2016

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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