The Characteristics of ZnO:Al Thin Films with Varied Thicknesses for Thin Film Copper Indium Gallium Selenide Solar Cells

In this study, the Al-doped ZnO (ZnO:Al) films which are used as the window layer of solar cells were deposited with various thicknesses on a copper indium gallium selenide solar cell (CIGS) layer to observe its properties. From X-ray diffraction observations the XRD distinct images of CIGS were detected. In addition, the ZnO:Al thin films, which are used as a transparent electrode, were analysed to determine their electrical properties by measuring specific resistance, Hall mobility, and carrier concentration. The test results showed an increase in the trend for Hall mobility and carrier concentration with a corresponding increase in thickness for the ZnO:Al thin films. In addition, the optical properties of the thin films were examined by measuring the transmittance of the thin film as the thicknesses varied. This revealed a tendency for the transmittance to decrease in accordance with an increase in the thickness of the thin film.