Transparent Conductive and Wide Band Gap Characteristics of Quaternary Mg and Al Co-Doped ZnO Thin Films Prepared by Radio Frequency Sputtering Method
Highly transparent, conducting Mg and Al co-doped ZnO (MAZO) thin films were deposited on glass substrates by a radio frequency (RF) magnetron sputtering technique. Evolution of structural, morphological and optical properties of MAZO thin films with different RF sputtering power (from 75 to 175 W) has been investigated. The X-ray diffraction pattern reveals the single growth phase of the thin films having a hexagonal wurtzite structure crystallized along a c-axis as its preferred orientation. A relatively smooth surface morphology and increased film thickness was observed when the RF sputtering power was increased. An increase in the peak intensity for the (0002) diffraction plane was also observed in the film deposited with increased sputtering power. Excellent electrical and optical properties in terms of the carrier concentration (1.87 × 1020 cm–3), charge carrier mobility (35.04 cm2V–1S–1), minimum resistivity (9.48 × 10–4 Ωcm), widest band gap energy (∼3.79 eV) and average transmittance over 80% were obtained in MAZO films deposited with an RF power of 150 W. This investigation provides key information regarding the optimization of RF sputtering power to prepare the best quality transparent conducting oxides.
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Document Type: Research Article
Publication date: March 1, 2016
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