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Computational Modeling of a Chemical Vapor Deposition Reactor for Epitaxial Silicon Formation

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The homo-epitaxial growth of a thin silicon film on a 300 mm-diameter silicon substrate in a horizontal chemical vapor deposition reactor was modeled using a computational fluid dynamics-based ANSYS FLUENT package program. During the deposition of an epitaxial silicon thin film, trichlorosilane and hydrogen are used as the reactant gases. The flow pattern of the incoming gas was controlled by adjusting the baffle design. The overall reaction was assumed to be SiHCl3 + H2 → Si(s) + 3HCl, the kinetic parameters of which were estimated by comparing the simulation results of the average silicon thickness and its profile with the measured values experimentally by FT-IR. The temperature distribution on the wafer surface was also estimated by comparing the mean silicon thickness profile over the radial position. The simulation results suggested that the maximum temperature difference on the wafer surface is approximately 60 °C at an average temperature of approximately 1,120 °C.
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Keywords: CHEMICAL VAPOR DEPOSITION; EPITAXIAL SILICON; FLUENT

Document Type: Research Article

Publication date: March 1, 2016

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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