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Analysis of Electrical Properties Variation by Phosphorus-Diffused Layer Profile Shape and Formation Process Sequence Modification for c-Si Solar Cells Applications

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The inclusion of low sheet-resistance (R S) emitters in conventional crystalline silicon solar cells usually results in a poor short wavelength response. Hence, a high R S solar cell with deep junction depth that has higher contact resistance, lower Auger- and Shockley-Read-Hall-recombination rates for making ohmic contact is a prerequisite for high efficiency solar cells. In this study, the emitter doping profile of high R S over Ω80/sq. was made using the deep doping process. In the deep doping process, R S of 25 Ω/sq. was achieved and our targeted high R S of 80 Ω/sq. was obtained after applying the etch-back process and the pre-deposition process. The increase of surface concentration by pre-deposition reduces contact resistance while the deep junction depth prevents shunt. The solar cell with the new emitter doping profile showed improvements of 39.6% on fill factor (FF) and 9.8% on efficiency compared to those with shallow emitter profiles. The spectral response under 500 nm improved as the sheet resistance was increased from 80 Ω/sq. to 130 Ω/sq. This profile is expected to contribute to the development of high efficiency high sheet resistance solar cells with Ag paste for mass production.
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Keywords: DOPING CONCENTRATION; EMITTER PROFILE; HIGH SHEET RESISTANCE; JUNCTION DEPTH; POCL3

Document Type: Research Article

Publication date: March 1, 2016

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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