Analysis of Electrical Properties Variation by Phosphorus-Diffused Layer Profile Shape and Formation Process Sequence Modification for c-Si Solar Cells Applications
The inclusion of low sheet-resistance (R S) emitters in conventional crystalline silicon solar cells usually results in a poor short wavelength response. Hence, a high R S solar cell with deep junction depth that has higher contact resistance, lower Auger- and Shockley-Read-Hall-recombination rates for making ohmic contact is a prerequisite for high efficiency solar cells. In this study, the emitter doping profile of high R S over Ω80/sq. was made using the deep doping process. In the deep doping process, R S of 25 Ω/sq. was achieved and our targeted high R S of 80 Ω/sq. was obtained after applying the etch-back process and the pre-deposition process. The increase of surface concentration by pre-deposition reduces contact resistance while the deep junction depth prevents shunt. The solar cell with the new emitter doping profile showed improvements of 39.6% on fill factor (FF) and 9.8% on efficiency compared to those with shallow emitter profiles. The spectral response under 500 nm improved as the sheet resistance was increased from 80 Ω/sq. to 130 Ω/sq. This profile is expected to contribute to the development of high efficiency high sheet resistance solar cells with Ag paste for mass production.
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Document Type: Research Article
Publication date: March 1, 2016
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