Dislocation and Saturation Current Density Analysis by Rear-Side Al Amount Variation for n-Type Al-p+ Emitter Crystalline Silicon Solar Cell
This paper presents a dislocation and saturation of current density analysis by varying the amount of rear-side Al. The fabrication process optimizes an aluminum-alloyed emitter using a screen printing number and varying the co-firing on n-type crystalline silicon (c-Si) wafers using a suitable industry method. N-type silicon materials have high diffusion-lengths due to the reduced recombination activities of metal impurities and other nonmetallic defects compared with p-type silicon and this fulfills the requirement for innovative solar cells. To utilize the advantage of the n-type silicon wafers for manufacturing simple and industrially feasible high-efficiency solar cells, we adopted screen-printing and co-firing of aluminum (Al) alloyed n + n p + solar cells featuring a rear Al-p+ emitter easily fabricated through the screen-printing process. We achieved a back surface field (BSF) that was 7 μm in thickness by applying 13.14 mg/cm2 of Al paste in by printing on both sides and heating the material in an high temperature infra-red (IR) furnace at a peak temperature of 756.5 °C. In the furnace, the temperature increased at a rate of 70.82 °C/sec with an efficiency of 17.36%, saturation current density J 01 of 7.16 × 10–9 mA/cm2 and J 02 of 3.55 × 10–5 mA/cm2, respectively.
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Document Type: Research Article
Publication date: March 1, 2016
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