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Effects of Ga Contents on Structural and Electrical Properties in Cu(In,Ga)Se2 Thin Film Solar Cell

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CIGS thin-film was prepared on a substrate coated with Mo thin-films on soda-lime glass by using a threestage co-evaporation method. The changes in the structural and electrical of properties of CIGS thin-films were analyzed with different Ga contents. Furthermore, electric current–voltage measurements were taken for the CIGS thin-film solar cells. As the Ga/(In + Ga) ratio increases, the grain sizes decreases. We were obtained lowest resistivity of 1.02 Ωcm at Ga composition of 0.33. As also the Ga composition increases, the shape of the particle was grown into chalcopyrite structured triangle form saturation current is decreased in the quasi-neutral region. As these results, the efficiency increased to 13.61% as the Ga/(In + Ga) ratio increased to 0.33.
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Document Type: Research Article

Publication date: March 1, 2016

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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