Improved Bias Stability of a Solution-Processed ZTO Thin-Film Transistor Using Thin Layer Passivation
A very thin passivation layer of the In2O3 semiconductor for a zinc-tin oxide (ZTO) channel was prepared with various In2O3 concentrations ranging from 0.01 M to 0.2 M. Among them, the best electrical properties of ZTO TFT with a 0.01 M In2O3
passivation layer were observed: field-effect mobility, V
th, subthreshold slope, and an on-to-off current ratio of 3.97 cm2/V ยท s, 1.83 V, 0.76 V/dec and > 106, respectively. The electrical properties and positive bias stability of the
In2O3-passivated ZTO TFTs were better than those of a solution-processed ZTO TFT and In2O3 TFT.
Keywords: DOUBLE ACTIVE LAYER; IN2O3; PASSIVATION; SOLUTION-PROCESS; ZTO TFT
Document Type: Research Article
Publication date: 01 February 2016
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