Improved Heat Dissipation in GaN-Based Thin-Film Light-Emitting Diode with Lateral-Electrode Configuration
In this paper, a GaN-based thin-film LED with lateral-electrode configuration has been fabricated by transferring the conventional LED on patterned sapphire substrate onto silicon substrate using a double-transfer technique. The transferred LED has similar electrical characteristics to the conventional LED, indicating that the electrical characteristics of LED device can be retained very well after transfer processes. Under a high injected current, the transferred LED shows superior output performance and more excellent stability of light emission, which make it easy to operate under a high drive current. This great improvement should be attributed to the improved thermal performance of transferred LED induced by the removal of sapphire and the good thermal conductivity of silicon substrate. Such device offers an alternative way to fabricate high performance GaN-based thin-film LED.
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Document Type: Research Article
Publication date: February 1, 2015
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