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Improved Heat Dissipation in GaN-Based Thin-Film Light-Emitting Diode with Lateral-Electrode Configuration

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In this paper, a GaN-based thin-film LED with lateral-electrode configuration has been fabricated by transferring the conventional LED on patterned sapphire substrate onto silicon substrate using a double-transfer technique. The transferred LED has similar electrical characteristics to the conventional LED, indicating that the electrical characteristics of LED device can be retained very well after transfer processes. Under a high injected current, the transferred LED shows superior output performance and more excellent stability of light emission, which make it easy to operate under a high drive current. This great improvement should be attributed to the improved thermal performance of transferred LED induced by the removal of sapphire and the good thermal conductivity of silicon substrate. Such device offers an alternative way to fabricate high performance GaN-based thin-film LED.
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Document Type: Research Article

Publication date: February 1, 2015

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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