Synthesis of Ga2O3 Nanorods with Ultra-Sharp Tips for High-Performance Field Emission Devices
We synthesized catalyst-free β-Ga2O3 nanorods with terminated ultra-sharp tips by heat treating single crystalline GaAs in a chemical vapor deposition (CVD) chamber without introducing a precursor. The unique, straight-forward, synthetic route and a possible growth mechanism are discussed to explain the different morphology of the grown nanorods and the ultra-sharp nanostructures. The morphology and structure of the nanorods were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) and Raman-spectroscopy. The ultra-sharp tips were found to have radii of ∼3–5 nm and were utilized to achieve enhanced field emission. The field emission characteristics demonstrated a turn-on field of 2.1 Vμm–1, a threshold electric field of 5.6 Vμm–1, and a geometrical field enhancement factor of 3786, making them comparable to nanostructured diamond and highly oriented single wall carbon nanotubes.
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Document Type: Research Article
Publication date: February 1, 2015
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