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Synthesis of Ga2O3 Nanorods with Ultra-Sharp Tips for High-Performance Field Emission Devices

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We synthesized catalyst-free β-Ga2O3 nanorods with terminated ultra-sharp tips by heat treating single crystalline GaAs in a chemical vapor deposition (CVD) chamber without introducing a precursor. The unique, straight-forward, synthetic route and a possible growth mechanism are discussed to explain the different morphology of the grown nanorods and the ultra-sharp nanostructures. The morphology and structure of the nanorods were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) and Raman-spectroscopy. The ultra-sharp tips were found to have radii of ∼3–5 nm and were utilized to achieve enhanced field emission. The field emission characteristics demonstrated a turn-on field of 2.1 Vμm–1, a threshold electric field of 5.6 Vμm–1, and a geometrical field enhancement factor of 3786, making them comparable to nanostructured diamond and highly oriented single wall carbon nanotubes.
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Keywords: FIELD EMISSION; FIELD ENHANCEMENT FACTOR; GALLIUM OXIDE; NANOROD

Document Type: Research Article

Publication date: February 1, 2015

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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