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Performance Evaluation of Silicon Nanowire Gate-All-Around Field-Effect Transistors and Their Dependence of Channel Length and Diameter

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The performance of a semiconducting Silicon Nanowire (SiNW) Gate-All-Around (GAA) transistors as basic logic gates are assessed and tabulated for certain metric, against those of metal-oxide-semiconductor field-effect transistors (MOSFETs). Both SiNW and nano-MOSFET models agree considerably well with the trends available in experimental data. The simulation results show that silicon nanowire can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of SiNWFET and MOSEFET, namely propagation delay, energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. In addition, the influence of nanowire channel length and diameter over drain-induced barrier lowering (DIBL) and substhreshold swing (SS) in SiNWFET are also explored and compared with other experimental data. It has been shown that the SiNWFET model has a lower power-delay product (PDP) and energy-delay product (EDP) than of the 32 nm MOSFET Predictive Technology Model (PTM) in the circuit simulations. Shorter length and smaller diameter nanowire are desired to suppress short channel effects. Ultimately, SiNWFET have superior performance compared to nano-MOSFET due to the nearly ideal carrier transport in quasi-one dimensional structure.
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Keywords: 32 NM; DEVICE MODELING; GAA; HSPICE; LOGIC GATES; MOSFET; SIMULATION; SINW

Document Type: Research Article

Publication date: January 1, 2015

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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