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Preparation and Characterization of Thermoelectric Thin-Film Devices Consisting of Co-Evaporated Bi2Te3 and Sb2Te3 Films

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A cross-plane thermoelectric thin-film device was obtained by flip-chip bonding the top substrate, which consisted of 50 pairs of co-evaporated n-type Bi2Te3 and p-type Sb2Te3 thin-film legs, to Cu/Au bumps in the bottom substrate. The actual temperature difference ΔTG working across the thin-film legs was estimated to be 5 times smaller than the apparent temperature difference ΔT applied across the thin-film device. The thin-film device exhibited an open-circuit voltage of 50.7 mV and a maximum output power of 2.81 μW when an apparent temperature difference ΔT of 38.9 K was applied across the top and bottom substrates of the thin-film device.
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Document Type: Research Article

Publication date: January 1, 2015

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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