Preparation and Characterization of Thermoelectric Thin-Film Devices Consisting of Co-Evaporated Bi2Te3 and Sb2Te3 Films
A cross-plane thermoelectric thin-film device was obtained by flip-chip bonding the top substrate, which consisted of 50 pairs of co-evaporated n-type Bi2Te3 and p-type Sb2Te3 thin-film legs, to Cu/Au bumps in the bottom substrate. The actual temperature difference ΔTG working across the thin-film legs was estimated to be 5 times smaller than the apparent temperature difference ΔT applied across the thin-film device. The thin-film device exhibited an open-circuit voltage of 50.7 mV and a maximum output power of 2.81 μW when an apparent temperature difference ΔT of 38.9 K was applied across the top and bottom substrates of the thin-film device.
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Document Type: Research Article
Publication date: January 1, 2015
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