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Growth of Al Doped ZnO Thin Films Prepared with a Powdery Sputter Target for Low Cost Applications

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Aluminum doped zinc oxide (AZO) films were prepared by r.f. magnetron sputtering. In the present work, ZnO powder with Al2O3 content of 2.5 wt% was used as a sputter target in order to reduce the cost and time of the film formation processes. The influence of the sputtering power on the structural, electrical, and optical properties of the AZO films was investigated. The electrical resistivity was decreased when the films were deposited at a higher power. The minimum value of 7.5 × 10–4-cm was obtained at the sputtering power of 195 Watt. The optical transmittance of AZO films exhibits a strong dependence on the sputter power. The optical transmittance of the film was improved with increasing the r.f. power and the absorption edge shifted to a shorter wavelength, suggesting that the optical band gap increased.
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Document Type: Research Article

Publication date: January 1, 2015

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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