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The Role of Atomic Layer Deposited Aluminum Oxide on SnO2 Based Dye-Sensitized Solar Cells Performance

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The porous SnO2 photoelectrode coated by ultra-thin alumina through atomic layer deposition (ALD) technique for purpose of suppressing the interfacial charge recombination is explored in this paper. We find that an ultra-thin Al2O3 coating on mesoporous SnO2 photoelectrode significantly improves the open-circuit voltage, short-circuit current, and fill factor, as a result, leading to the increase of energy conversion efficiency. Moreover, we notice that different process parameters remarkably affect conversion efficiency, especially the open-circuit voltage. We predict that there is other model in ALD Al2O3 modified porous SnO2 to dominate the carrier transfer: the aluminum oxide coating remarkably increases the absorption ability of dye N719, which leads to a high cell efficiency.
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Keywords: ALD PARAMETERS; ALUMINA OXIDE; MODEL; SNO2 PHOTOELECTRODE

Document Type: Research Article

Publication date: January 1, 2015

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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