The Role of Atomic Layer Deposited Aluminum Oxide on SnO2 Based Dye-Sensitized Solar Cells Performance
The porous SnO2 photoelectrode coated by ultra-thin alumina through atomic layer deposition (ALD) technique for purpose of suppressing the interfacial charge recombination is explored in this paper. We find that an ultra-thin Al2O3 coating on mesoporous SnO2 photoelectrode significantly improves the open-circuit voltage, short-circuit current, and fill factor, as a result, leading to the increase of energy conversion efficiency. Moreover, we notice that different process parameters remarkably affect conversion efficiency, especially the open-circuit voltage. We predict that there is other model in ALD Al2O3 modified porous SnO2 to dominate the carrier transfer: the aluminum oxide coating remarkably increases the absorption ability of dye N719, which leads to a high cell efficiency.
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Document Type: Research Article
Publication date: January 1, 2015
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