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Epitaxial Growth of Perovskite (Ba, Sr)TiO3 Thin Films on Silicon

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Epitaxial (Ba0.5, Sr0.5)TiO3 (BST) and yttria stabilized zirconia (YSZ) thin films have been grown by pulsed-laser deposition (PLD) on silicon substrate. It is found that very thin YSZ buffer layer yields the epitaxial growth of BST thin films on Si. Low ambient oxygen pressures are required for growing the YSZ buffer layer whereas the ambient oxygen pressure does not influence the epitaxial growth of BST films. In these double heteroepitaxial structures, the axial relationship is BST[200]/YSZ[200]/Si[100]. As the YSZ buffer layer becomes thicker than 10 nm, the BST films exhibits a polycrystalline nature. Moreover, BST films experienced lattice distortion along the in-plane and surface normal directions due to the stress induced primarily by thermal stress during deposition.
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Keywords: (BA,SR)TIO3; BUFFER LAYER; EPITAXIAL GROWTH; YSZ

Document Type: Research Article

Publication date: January 1, 2015

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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