Thermoelectric Properties of Vacuum-Annealed p-Type Co–Sb Thin Film
In this experiment, single-phase CoSb3-skutterduite thin-film specimens having a micron-thick thickness on average were synthesized using RF-magnetron sputtering. The samples were deposited on silicon (Si) substrates at a room-temperature for two hours. Then, they were subsequently vacuum-annealed at 473 K, 573 K and 773 K for 2 hours to see how electrical transport and thermoelectric properties change with annealing. According to our results, the annealing effect was not observable in power factor measurements because the initially amorphous as-deposited sample was introduced a 'heat-treatment' effect from the high-temperature property measurement itself. This means that further heat-treatment of the amorphous p-type CoSb3 film is not necessary given the high enough operation temperature. We were able to observe the power factor of approximately 0.33 mW/K2m at 703 K in the as-deposited specimen. When compared with the previously reported results of DC-sputtered and (In, Yb)-doped CoSb3 specimens, this value was comparably high.
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Document Type: Research Article
Publication date: January 1, 2015
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