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Large-Area Quantum-Dot Light Emitting Diode Arrays with ZnO Nanoparticles as Electron Transport/Injection Layer

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This paper reports the large area quantum dots light emitting diodes (QLEDs) that are composed of CdSe/ZnS core/shell quantum dots (QDs) as the light emitting layer (EML), ZnO nanoparticles (NPs) as the electron transport/injection layer (ETL) and organic polymers as the hole transport layer (HTL). By varying the thickness of ETL and EML, the performance of these QLEDs can be tailored/optimized accordingly, which is due to the different injection rate of the holes and electrons caused by the different thicknesses of ZnO and QDs layers. By adjusting the thicknesses of the constituent layers, large area QLED devices (10 cm × 10 cm active area, 32 × 32 pixels) are uniformly developed with decreased leakage current, improved electroluminance efficiency (1∼1.8 cd/A), low turn-on voltages (2∼3.2 V) and saturated emission with the Commission Internationale de l'Enclairage (CIE) coordinates of (0.5134, 0.4868). This is attributed to the better electro-optical device design with well balanced carrier conduction, reduced quenching of QDs emission, and enhanced recombination.
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Document Type: Research Article

Publication date: December 1, 2014

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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