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Thin Film Morphology Control via a Mixed Solvent System for High-Performance Organic Thin Film Transistors

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The electrical performance of a thin film in an organic thin film transistor depends on the film morphology. A mixed solvent system was demonstrated to provide a useful method for controlling the morphologies of organic semiconductor layers in organic thin film transistor. To overcome the limitations on solvent properties, control over the morphology of a 2-(6-((2-ethylhexyl)oxy)naphthalen-2-yl)anthracene film using a tetrahydrofuran/chloroform mixed system (with ratio of 1:5 w/w). Here, in an effort to achieve improved the device electrical performance properties for use in organic thin film transistors, we have examined a mixed solvent system that is suitable for the fabrication of organic semiconductors.
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Keywords: CRYSTALLINITY; FUSED ACENE; MIXED SOLVENT; MORPHOLOGY; ORGANIC SEMICONDUCTOR; ORGANIC THIN FILM TRANSISTOR (OTFT)

Document Type: Research Article

Publication date: September 1, 2013

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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