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High Performance Dye-Sensitized Solar Cell Using CuInGaSe2 as Counter Electrode Prepared by Sputtering

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High quality copper indium gallium diselenide (CIGS) thin films were prepared by magnetron sputtering from a single ternary alloy target and annealed under Se vapor at 550 °C for 30 min. The CIGS films were used as counter electrode (CE) in dye-sensitized solar cells (DSSCs). Photovoltaic performance of the cells was optimized by adjusting thickness of the CIGS films. The highest conversion efficiencies of CIGS reached 7.13%, comparable to the efficiency of the DSSC using a Pt CE (6.89%). The cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) results showed the CIGS films as CE exhibited good electrocatalytic activity and high conductivity, which demonstrated that CIGS films prepared by sputtering could serve as an effective CE material in DSSCs.
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Keywords: CIGS; COUNTER ELECTRODE; CU–IN–GA; DSSCS; SELENIZATION; SPUTTERING

Document Type: Research Article

Publication date: September 1, 2013

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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