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Growth of (111) Oriented CeO2 Thin Films and Their Structural and Optical Properties

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We report the oriented growth of single phase CeO2 thin films using pulsed laser deposition technique and their structural and optical properties. X-ray diffraction (XRD) measurements confirm the (111) oriented growth of CeO2 thin films on amorphous quartz substrates. The atomic force microscopy (AFM) measurements supported the XRD measurements and depict the formation of larger sized crystallites in annealed films. UV-visible absorption spectra show significant red-shift in the absorption edge and hence, decrease in the band gap energy has been observed in annealed CeO2 film. Raman mode intensity of F 2 g mode was observed to increase after heat treatment. The photoluminescence (PL) spectra show visible emission from both the samples of as-deposited and annealed CeO2 films.
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Document Type: Research Article

Publication date: November 1, 2012

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  • Science of Advanced Materials (SAM) is an interdisciplinary peer-reviewed journal consolidating research activities in all aspects of advanced materials in the fields of science, engineering and medicine into a single and unique reference source. SAM provides the means for materials scientists, chemists, physicists, biologists, engineers, ceramicists, metallurgists, theoreticians and technocrats to publish original research articles as reviews with author's photo and short biography, full research articles and communications of important new scientific and technological findings, encompassing the fundamental and applied research in all latest aspects of advanced materials.
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