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Enhanced ON Current Pocket Tunnel FET for Circuits Operating Near Threshold

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Near threshold operation of device and circuit is still a challenging area with conventional MOSFET topologies. This paper presents the performance comparison of Ge/Si double gate tunnel FET (DGTFET) and pocket DGTFET in terms of ON state and OFF state current. The Ge DGTFET has higher ON current than Si DGTFET and less ON current than pocket DGTFET. The present work focuses impact of pocket DGTFET on circuits operating near threshold voltage. The doping concentration is optimized in order to create sufficient ON current, with minimum allowable OFF current. The presence of voltage overshoot in pocket DGTFET is the consequence of larger Miller capacitance and hence included in our present analysis. The device circuit co-design approach (common substrate inverter) for pocket DGTFET has been analyzed using the mixed device-circuit simulations. Further a comparative analysis has been carried out for pocket DGTFET and CMOS inverter and simulation results reveal that, the operating power and leakage power for pocket DGTFET and CMOS inverter are 2.4 μW, 48.7 mW and 3.8 pW, 55.4 μW respectively.
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Keywords: CMOS INVERTER; GE/SI DGTFET; NEAR THRESHOLD COMPUTING; OFF CURRENT; ON CURRENT; POCKET DGTFET

Document Type: Research Article

Publication date: April 1, 2015

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  • QUANTUM MATTER is a peer-reviewed interdisciplinary journal consolidating research activities in all theoretical, experimental and technological aspects dealing with fundamental structure of matter from cosmology to materials science.
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