Inclusion of GaAs Heterojunction Window Layers on the Emitters of Microtextured Si Solar Cells
We investigated the inclusion of GaAs heterojunction window layers on Si solar cell emitters. The n-type GaAs thin film was deposited on microtextured pn junction Si solar cells for 3 and 30 sec using an electron beam evaporator to form the window layers. The solar cells
were fabricated with standard cell processes, including microtexturing the surface, n-type emitter diffusion, GaAs thin film deposition, SiN
x
anti-reflection coating and metallization with Ag and Al pastes by screen printing, and finally co-firing and edge isolation
processes. The fabricated cells showed a reduced photoreflectance at the spectral range of 400∼800 nm, indicating the optical window effect of GaAs. Furthermore, the optical window can improve the cell conversion efficiency. For the GaAs thin film deposited for 3 sec, cell conversion efficiency
improved to 16.92% when compared to a reference cell of 16.74%.
Keywords: E-BEAM EVAPORATION; FILL FACTOR; GAAS THIN FILM; PHOTOREFLECTANCE
Document Type: Short Communication
Publication date: 01 April 2018
- Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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