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Properties of Ga–Zn–O Ultraviolet Phototransistors Using Radio-Frequency Magnetron Co-Sputtering Method

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In this paper, we report on the fabrication of Ga-doped zinc oxide (GZO) channel ultraviolet (UV) phototransistors. Under dark measurement conditions, it is found that the values of μFE , VT , SS, and I ON/I OFF of the fabricated device are 25.8 cm2/Vs, 0.35 V, 0.2 V/decade, and 1 × 105, respectively. Unpassivated devices have a negative VTH shift with positive bias stress, which results from the interactions of the moisture present in air with the GZO channel during the fabrication procedure and/or storage. Furthermore, it is found that the deep-UV to visible-rejection ratio can reach 1.1 × 102 for the fabricated phototransistor. These electro-optical properties indicate that the fabricated devices not only present good performance as thin-film transistors (TFTs), but are also useful for deep-UV light sensing applications.
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Keywords: GA2O3; GZO; ZNO

Document Type: Short Communication

Publication date: March 1, 2018

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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