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Self-Limited In Incorporation in (In,Ga)N/GaN Short-Period Superlattices

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We investigate the formation of submonolayer InN quantum sheets and their embedment into GaN to form (In,Ga)N/GaN superlattices. While supplying InN on GaN(0001), we have monitored in-situ the formation of an In adlayer manifesting itself by the (1 × 3) reflection high-energy electron diffraction pattern, that is thought to be established by a third of a monolayer of In adatoms consistent with a (√3 × √3)R30° structure. We have utilized this In adsorbate structure on GaN(0001) as a template for the synthesis of laterally ordered InGaN quantum sheets with a self-limited thickness of 1 monolayer and an In content expected to be 0.33 as defined by the (√3 × √3)R30° structure. Repeatedly inserting these quantum sheets into GaN, we have synthesized (In,Ga)N/GaN shortperiod superlattices with abrupt interfaces and high periodicity, as concurrently determined ex-situ by X-ray diffractometry. The embedded quantum sheets consist of single and coherent (In,Ga)N monolayers with an In content of 0.22–0.28, even when the InN supply is increased up to 4.7 MLs. Therefore, these results also evidence the self-limitation of the In content to the maximum expected of 0.33 within coherent monolayer-thick (In,Ga)N quantum sheets.
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Document Type: Short Communication

Publication date: July 1, 2017

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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