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Unconventional Strain Relaxation of Sb2Te3 Grown on a GeTe/Sb2Te3/GeTe Heterostructure on Si(111)

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The epitaxy of antimony telluride (Sb2Te3) has been successfully realized on Si(111) substrates as well as on graphene. It has been also employed in memory applications as constituting material in Sb2Te3/GeTe phase change superlattice structures, which have demonstrated outstanding performances with respect to the ternary alloy GeSbTe. Here we present the molecular beam epitaxy and characterization of Sb2Te3 on a GeTe/Sb2Te3/GeTe heterostructure on Si(111). Reflection high-energy electron diffraction, X-ray diffraction, X-ray reflectivity and Raman spectroscopy data are reported. While structural properties are comparable with those of Sb2Te3 grown directly on silicon, an unconventional strain relaxation occurs, tentatively attributed to the uneven surface of the heterostructure not matching the regular layered structure of the growing Sb2Te3 domains during coalescence.
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Keywords: EPITAXY; HETEROSTRUCTURE; PHASE CHANGE MATERIALS; STRAIN RELAXATION; VAN DER WAALS

Document Type: Short Communication

Publication date: July 1, 2017

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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