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Effects of Strain in Low-Dimensional Semiconductor Structures

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Strain state in low-dimensional semiconductor structures has a significant influence on their optical and electrical properties, and strain technology is widely utilized to tailor the physical properties of semiconductor materials and devices, such as to engineer the band gap and the carrier mobility of semiconductor heterostructures. The paper reviews the effect of strain on semiconductor quantum wells (QWs), nanowires, and quantum dots (QDs). The recent researches on the strain distribution and engineering of the physical properties by strain in (In,Ga)As, (In,Ga)P, III–V nitrogen, ZnO and SiGe semiconductor QWs, nanowires and QDs are overviewed.
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Keywords: GAAS; GAN; GE; INGAAS; INGAN; INN; NANOWIRES; QUANTUM DOTS; QUANTUM WELLS; SI; STRAIN; ZNO

Document Type: Review Article

Publication date: July 1, 2017

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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