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Synthesis and Field-Emission Property of 3C-SiC Nanowires

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3C-SiC nanowires were synthesized via a pyrolysis process by adopting ammonia as dopant source. The morphology and structure characterizations reveal that the as-synthesized individual 3C-SiC nanowire has blende structure with diameter about 200 nm and length of tens microns. The experimental investigation of field emission performances indicated that as-synthesized 3C-SiC nanowires have good field emission properties with the low turn-on field (E to) of about 6.5 V μm–1, the threshold electric field (E thr) of 8.3 V μm–1and the high-field enhancement factor of 2610, respectively. The photoluminescence investigation shows that the peak of the as-synthesized 3C-SiC nanowires has a blue-shift compared to the 3C-SiC bulk materials, which should be due to the quantum confinement effect of nanostructure. This superior FE properties attribute to the sharp tip, N-doping, good crystallinity and the high-aspect ratio of the nanowires, and made it very attractive candidate for application in flat panel display and other nanoelectronic devices.
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Keywords: CRYSTAL GROWTH; FIELD-EMISSION PROPERTY; NANOSTRUCTURE; SEMICONDUCTORS

Document Type: Short Communication

Publication date: March 1, 2016

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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