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Fabrication and Characterization of High Quality ZnO Nanowires/GaN Heterojunction Light Emitting Diode

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The n-ZnO nanowires were fabricated on p-GaN substrates through the vapor deposition method without catalyst. The XRD and FESEM measurements have been carried out, which indicates the high-quality ZnO nanowires obtained. The In to ZnO nanowires is ohmic contact, the Ni/Au (10/20 nm) to p-GaN also show the good ohmic contact by annealing in oxygen atmosphere 5 min. IV characteristic curves of n-ZnO nanowire/p-GaN heterojunction show a very good rectifying property. The strong blue no defect electroluminescence (EL) emission was observed in ZnO nanowire/GaN LED.
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Document Type: Short Communication

Publication date: November 1, 2015

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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