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Self-Controlled Synthesis of Microscale Silicide Embossments and Pits with Multi-Shape and Orientation

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By high temperature annealing of silicon wafers with thin Cu and Fe films deposited on, we got the silicides embossments (SEs)/silicon etching pits (SEPs) with different morphologies. Microscale triangle, square and wire-like SEs/SEPs were obtained on Si(111), Si(100) and Si(110) substrates, respectively. The synthesis of SEs/SEPs was closely related to temperature and orientation of Si substrates. We got copper silicides embossments at 950 °C but silicon etching pits at 1100 °C. The size of SEs/SEPs can be changed from hundred nm to several μm. We analyzed the morphological evolution and formation mechanism from SEs to SEPs with comparing samples of different temperature. This simple and practicable work may help to develop new technology for Si-based nanofabrication and to find potential functional nanomaterials in the future.
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Document Type: Short Communication

Publication date: November 1, 2015

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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