Optimisation of Write Performance of Phase-Change Probe Memory for Future Storage Applications
Phase-change probe memory using Ge2Sb2Te5 material has been considered as one of the promising candidates as next-generation data storage device due to its ultra-high density, low energy consumption, short access time, and long retention time. In order to mimic the practical setup, and thus fully explore the potential of phase-change probe memory for data storage applications, a parametric approach was performed to assess the role of the electrical, thermal, and thickness properties of the media stack and probe tip on the resulting temperature distribution inside the systems, and on the write voltage and power required. Based on these investigations, the design of an optimal phase-change probe architecture that includes phase-change media stack and probe tip is proposed. The suggested media stack comprises a thin Ge2Sb2Te5 layer sandwiched between a thin capping layer with fairly high electrical conductivity and low thermal conductivity and a thick underlayer with a high electrical conductivity and fairly low thermal conductivity, while the probe tip is chosen to be a SiO2 encapsulated Si tip with PtSi at the tip apex. The feasibility of using this optimal memory structure to achieve ultra-high recording density under pico-Joule energy within nano-second period is also demonstrated according to the developed electro-thermal simulation.
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Document Type: Short Communication
Publication date: November 1, 2015
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- Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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